PART |
Description |
Maker |
M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 |
128M Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20A |
128M Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
UPD45128441G5-A80L-9JF UPD45128841G5-A80L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory
|
UPD45128163G5-A75-9JF-E UPD45128163-E |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory
|
P2S28D30CTP P2S28D40CTP |
(P2S28D30CTP / P2S28D40CTP) 128M Double Data Rate Synchronous DRAM
|
MIRA
|
HY57V28162 HY57V281620HCT HY57V281620HCLT |
8Mx16|3.3V|4K|6|SDR SDRAM - 128M 4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX
|
PD45128163G5-A10LT-9JF PD45128163G5-A10T-9JF PD451 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC Elpida Memory, Inc. ELPIDA[Elpida Memory]
|